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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Applied Science and Convergence Technology Applied Science and Convergence Technology Vol.29 No.6
- 발행연도
- 2020.11
- 수록면
- 157 - 161 (5page)
이용수
초록· 키워드
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Inductively coupled plasma can produce high density plasma at a lower pressure than capacitively coupled plasma and is widely used in semiconductor manufacturing processes. This study investigated the characteristics of argon plasma produced through inductive coupling at low pressures. This simulation study assumed a 2D axisymmetric fluid-based model. The modeling of neutral and ions was performed by applying heat transfer and gas flow physics, which resulted in improved simulation accuracy. Convergence of results was obtained when ion temperature and mobility at pressures ≤ 10 mTorr were included in the plasma analysis. The results of the plasma model based on the Maxwellian, Druyvesteyn, and Boltzmann electron energy distribution functions were compared. In addition, the correlations between plasma parameters under various pressure levels were evaluated. This study could help in understanding the physical plasma discharge phenomenon and deriving optimum process parameters and conditions for semiconductor processes.
목차
ABSTRACT
1. Introduction
2. Model description
3. Results and discussion
4. Conclusions
References
참고문헌 (11)
참고문헌 신청
T. Makabe / 2006 / Plasma Electronics: Applications in Microelectronic Device Fabrication / Taylor and Francis :1~5
G. A. Hebner / 2000 / J. Appl. Phys 87:7660
M. A. Lieberman / 2005 / Principles of Plasma Discharges and Materials Processing / John Wiley & Sons :1~22
L. Zhang / 2017 / Jpn. J. Appl. Phys 56:030304
A. Mishra / 2013 / Surf. Coat. Tech 237:440
G. A. Hebner / 2000 / J. Appl. Phys 87:7660
M. A. Lieberman / 2005 / Principles of Plasma Discharges and Materials Processing / John Wiley & Sons :1~22
L. Zhang / 2017 / Jpn. J. Appl. Phys 56:030304
A. Mishra / 2013 / Surf. Coat. Tech 237:440
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