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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2018.11
- 수록면
- 1,912 - 1,919 (8page)
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초록· 키워드
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The output capacitance of power semiconductor devices is important in determining the switching losses and in the operation of some resonant converter topologies. Thus, it is important to be able to accurately determine the output capacitance of a particular device operating at elevated power levels so that the contribution of the output capacitance discharge to switch-on losses can be determined under these conditions. Power semiconductor switch manufacturers usually measure device output capacitance using small-signal methods that may be insufficient for power switching applications. This paper shows how first principle methods are applied in a novel way to obtain more relevant large signal output capacitances of Gallium-Nitride (GaN) FETs using the drain-source voltage transient during device switch-off numerically. A non-linear capacitance for an increase in voltage is determined with good correlation. Simulations are verified using experimental results from two different devices. It is shown that the large signal output capacitance as a function of the drain-source voltage is higher than the small signal values published in the data sheets for each of the devices. It can also be seen that the loss contribution of the output capacitance discharging in the channel during switch-on correlates well with other methods proposed in the literature, which confirms that the proposed method has merit.
목차
Abstract
I. INTRODUCTION
II. PROBLEM STATEMENT AND PROPOSED METHOD
III. EXPERIMENTAL RESULTS
IV. DISCUSSION OF RESULTS
V. CONCLUSIONS AND FUTURE WORK
REFERENCES
참고문헌 (17)
참고문헌 신청
M. Liang, T. Q. Zheng, and Y. Li, “An improved analytical model for predicting the switching performance of SiC MOSFETs,” J. Power Electron., Vol. 16, No. 1, pp.374-387, Jan. 2016.
J. B. Fedison, M. Fornage, M. J. Harrison, and D. R. Zimmanck, “Coss related energy loss in power MOSFETs used in zero-voltage-switched applications,” in Proc. IEEE Power Electronics Conference and Exposition, pp. 150-156, 2014.
Y. Li, T. Q. Zheng, Y. Zhang, M. Cui, Y. Han, and W. Dou, “Loss analysis and soft-switching behavior of flybackforward high gain DC/DC converters with a GaN FET,” J. Power Electron., Vol. 16, No. 1, pp.84-92, Jan. 2016.
N. Z. Yahaya, M. B. K. Raethar, and M. Awan, “Review on gallium nitride HEMT device technology for high frequency converter applications,” J. Power Electron., Vol. 9, No. 1, pp. 36-42 , Jan. 2009.
D. J. Perreault, J. Hu, J. M. Rivas, Y. Han, O. Leitermann, R. C. N. Pilawa-Podgurski, A. Sagneri, and C. R. Sullivan, “Opportunities and challenges in very high frequency power conversion,” in Proc. Applied Power Electronics Conference and Exposition, pp. 1-14, 2009.
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UCI(KEPA) : I410-ECN-0101-2019-560-000047878