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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2021.1
- 수록면
- 63 - 67 (5page)
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The resistance switching behavior of SRO/SZO/Pt devices is investigated in room temperature (RT). First, it was manufacturedas a single cell to see its electrical characteristics, and it was operated by bipolar resistive switching (BRS). In addition,to analyze the switching mechanism of the cell deposited at room temperature, an area dependence test and a temperaturedependence test were performed. As a result, in the low resistance state (LRS) there was no area-dependent and temperaturedependent,whereas in the high resistance state (HRS), the area-dependent and temperature-dependent local conduction filamentmodel was estimated. In addition, an 8 × 8 array is fabricated using a room-temperature process that is commerciallyadvantageous. The electrical characteristics are excellent; stable retention characteristics (125 °C, 2 h) and stable switchingcycle (109) operations are observed, which are applicable to next-generation memory.
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참고문헌 (17)
참고문헌 신청
Rozenberg, M. J. / 2004 / Nonvolatile memory with multilevel switching : a basic model / Phys. Rev. Lett 92:178302
Baikalov, A. / 2003 / Field-driven hysteretic and reversible resistive switch at the Ag–Pr0.7Ca0.3MnO3 interface / Appl. Phys. Lett 83:957
Lin, S. Q. / 2000 / Electric-pulse-induced reversible resistance change efect in magnetoresistive flms / Appl. Phys. Lett 76:2749
Waser, R. / 2009 / Redox-based resistive switching memories-nanoionic mechanisms, prospects, and challenges / Adv. Mater 21:2632
Borghetti, J. / 2010 / Memristive’ switches enable ‘stateful’ logic operations via material implication / Nat 464:873
Baikalov, A. / 2003 / Field-driven hysteretic and reversible resistive switch at the Ag–Pr0.7Ca0.3MnO3 interface / Appl. Phys. Lett 83:957
Lin, S. Q. / 2000 / Electric-pulse-induced reversible resistance change efect in magnetoresistive flms / Appl. Phys. Lett 76:2749
Waser, R. / 2009 / Redox-based resistive switching memories-nanoionic mechanisms, prospects, and challenges / Adv. Mater 21:2632
Borghetti, J. / 2010 / Memristive’ switches enable ‘stateful’ logic operations via material implication / Nat 464:873
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